Source Material

Ultra-high purity

Ultra-high purity silicon carbide (SiC) formed by chemical vapor deposition (CVD) is offered as source material for silicon carbide crystal growth by physical vapor transport (PVT). In PVT, source material is loaded into crucibles and sublimed onto a seed crystal. High purity source is required to make high-quality SiC crystals. Aymont offers large particle size SiC specifically for PVT because it has higher density than small-grained material formed by spontaneous combustion of Si and C-containing gases. Unlike solid-phase sintering or reaction of Si and C, it does not require dedicated furnaces for sintering, or require a time-consuming sintering step in the growth furnace. This large particle size material gives a near-constant evaporation rate, thereby improving run-to-run uniformity.